Transistor S8050

The S8050 is an NPN bipolar junction transistor (BJT) primarily used for general purpose low-power amplifying and switching applications. Enclosed in a TO-92 package, a compact plastic casing with three leads, it is well-suited for commercial and educational projects.

Key specifications for the S8050 transistor include:

• Collector-Emitter Voltage (V_CE): 20 V maximum
• Collector-Base Voltage (V_CB): 30 V maximum
• Emitter-Base Voltage (V_EB): 5 V maximum
• Collector Current (I_C): 700 mA maximum
• Power Dissipation (P_D): 1 W maximum
• DC Current Gain (h_FE): ranges from 85 to 400, indicating a relatively high efficiency in amplifying a signal.

Due to its high current gain and low saturation voltage, the S8050 is effective in small signal amplification and can be found in a variety of circuits, including driver stages of audio amplifiers, low-speed switching applications, and in the output stages of low power amplifi